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Infineon Technologies Electronic Components Datasheet

FS100R12KT4 Datasheet

IGBT-Module

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS100R12KT4
EconoPACK™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode
EconoPACK™2modulewithtrench/fieldstopIGBT4andEmitterControlled4Diode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
VorläufigeDaten
PreliminaryData
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
VCES 
1200
V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 95°C, Tvj max = 175°C
IC nom  100  A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM  200  A
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot  515  W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VGES 
+/-20
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 100 A, VGE = 15 V
IC = 100 A, VGE = 15 V
IC = 100 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 3,80 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 100 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 100 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 100 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,6
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 100 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,6
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 100 A, VCE = 600 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 2600 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,6
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 100 A, VCE = 600 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,6
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,75 2,10
2,05
2,10
V
V
V
5,2 5,8 6,4 V
 0,80  µC
 7,5 
 6,30  nF
 0,27  nF
  1,0 mA
  100 nA
0,13
 0,15 
0,15
0,02
 0,03 
0,035
0,30
 0,38 
0,40
0,045
 0,08 
0,09
7,20
 9,50 
10,5
5,40
 8,20 
9,00
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
 400 
A
  0,29 K/W
 0,19
K/W
-40  150 °C
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
1


Infineon Technologies Electronic Components Datasheet

FS100R12KT4 Datasheet

IGBT-Module

No Preview Available !

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS100R12KT4
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom
ContinuousDCforwardcurrent

PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 100 A, VGE = 0 V
IF = 100 A, VGE = 0 V
IF = 100 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 100 A, - diF/dt = 2600 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Sperrverzögerungsladung
Recoveredcharge
IF = 100 A, - diF/dt = 2600 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 100 A, - diF/dt = 2600 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VorläufigeDaten
PreliminaryData
VRRM 
1200
V
IF  100  A
IFRM 
I²t 
200
1550
1500
A

A²s
A²s
VF
IRM
Qr
Erec
RthJC
min. typ. max.
1,70 2,15
1,65
1,65
V
V
V
140
 145 
150
A
A
A
9,60 µC
 17,0  µC
19,0 µC
4,10 mJ
 7,00  mJ
8,00 mJ
  0,50 K/W
RthCH
 0,325
K/W
Tvj op
-40

150 °C
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
2


Part Number FS100R12KT4
Description IGBT-Module
Maker Infineon
Total Page 8 Pages
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