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IDH20G120C5 - 1200V SiC Schottky Diode

Description

Rev.

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / No forward recovery.
  • Temperature independent switching behavior.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Qualified according to JEDEC1) for target.

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Datasheet preview – IDH20G120C5

Datasheet Details

Part number IDH20G120C5
Manufacturer Infineon
File Size 1.09 MB
Description 1200V SiC Schottky Diode
Datasheet download datasheet IDH20G120C5 Datasheet
Additional preview pages of the IDH20G120C5 datasheet.

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Full PDF Text Transcription

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Diode Silicon Carbide Schottky Diode IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode IDH20G120C5 Rev. 2.
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