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IGC10T65QE - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 IGC10T65QE Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Techn

Key Features

  • 650V Trench & Field Stop technology.
  • high speed switching series third generation.
  • low VCE(sat).
  • low EMI.
  • low turn-off losses.
  • positive temperature coefficient.
  • qualified according to JEDEC for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Speed IGBT3 Chip IGC10T65QE Features:  650V Trench & Field Stop technology  high speed switching series third generation  low VCE(sat)  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target applications Recommended for:  discrete components and modules Applications:  uninterruptible power supplies  welding converters  converters with high switching frequency C G E Chip Type VCE ICn1) Die Size Package IGC10T65QE 650V 20A 3.19 x 3.21mm2 sawn on foil 1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization Mechanical Parameters Die size Emitter pad size Gate pad size Area total Thickness Wafer size Max.