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IKW40N65WR5
Reverse-Conducting IGBT
Reverse-Conducting IGBT with monolithic body diode
Features • VCE = 650 V • IC = 40 A • Powerful monolithic diode optimized for ZCS applications • High ruggedness, temperature stable behavior • Very low VCEsat and low Eoff • Easy paralleling capability due to positive temperature coefficient in VCEsat • Low EMI • Low electrical parameters depending (dependence) on temperature • Qualified according to JESD-022 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Potential applications • Welding • PFC • ZCS - converters
Description
C
TO-247 – 3Pin
2021-10-27
restricted
Type IKW40N65WR5
G E
Package PG-TO247-3
Marking K40EWR5
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IKW40N65WR5 Datasheet
