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IMLT65R040M2H Datasheet

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Infineon · IMLT65R040M2H File Size : 1.17MB · 9 hits

Features and Benefits


• Ultra‑low switching losses
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
• Flexible driving voltage and compatible with bipolar driving scheme
• Robust body diode operation under hard commutation events
• .XT interconnect.

IMLT65R040M2H IMLT65R040M2H IMLT65R040M2H
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SiC
MOSFET
IMLT65R040M2H
IMLT65R015M2H
IMLT65R020M2H
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