IMW120R030M1H Infineon Datasheet

IMW120R030M1H Key Features

• Very low switching losses
• Threshold-free on state characteristic
• Wide gate-source voltage range
• Benchmark gate threshold voltage, VGS(th) = 4.5V
• 0V turn-off gate voltage for easy and simple gate drive
• Fully controllable dV/dt
• Robust body diode for hard mutation
• Temperature independent turn-off switching losses
• Efficiency improvement
• Enabling higher frequency