IMW120R030M1H
IMW120R030M1H is Silicon Carbide MOSFET manufactured by Infineon.
Features
- Very low switching losses
Gate pin 1
- Threshold-free on state characteristic
- Wide gate-source voltage range
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- 0V turn-off gate voltage for easy and simple gate drive
- Fully controllable d V/dt
- Robust body diode for hard mutation
- Temperature independent turn-off switching losses
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system plexity and cost
Potential applications
- Energy generation o Solar string inverter and solar optimizer
- Industrial power supplies o Industrial UPS o Industrial SMPS
- Infrastructure
- Charge o Charger
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Drain pin 2
Source pin 3
Table 1
Key Performance and Package Parameters
Type
IMW120R030M1H 1200V
TC = 25°C, Rth(j-c,max)
56A
RDS(on)
Tvj = 25°C, ID = 25A, VGS = 18V
30mΩ
Tvj,max 175°C
Marking 12M1H030
Package PG-TO247-3
Please read the Important Notice and Warnings at the end of this...
