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IMW120R030M1H Datasheet Silicon Carbide MOSFET

Manufacturer: Infineon

Overview: IMW120R030M1H IMW120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide.

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IMW120R030M1H silicon carbide mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IMW120R030M1H
Manufacturer	Infineon
File Size	1.15 MB
Description	Silicon Carbide MOSFET
Download	IMW120R030M1H Download (PDF)

Key Features

Very low switching losses Gate pin 1.
Threshold-free on state characteristic.
Wide gate-source voltage range.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage for easy and simple gate drive.
Fully controllable dV/dt.
Robust body diode for hard commutation.
Temperature independent turn-off switching losses Benefits.
Efficiency improvement.
Enabling higher frequency.
Increased power density.
Cooling ef.

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