IPB025N10N3G Description
OptiMOS™3 Power-Transistor.
IPB025N10N3G Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Extremely low on-resistance R DS(on)
- High current capability
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21