IPP018N10N5
IPP018N10N5 is MOSFET manufactured by Infineon.
Features
- Idealforhighfrequencyswitchingandsync.rec.
- N-channel,normallevel
- Optimizedfor FOMOSS
- Verylowon-resistance RDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
1.83 mΩ
Qoss
213 n C
168 n C
TO-220-3 tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPP018N10N5
Package PG-TO220-3
Marking 018N10N5
Related Links
- Final Data Sheet
Rev.2.1,2022-03-28
Opti MOSTM5Power-Transistor,100V
Tableof Contents
Description
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