IPT007N06N - MOSFET

Infineon

General Description

Key Features

100% avalanche tested.
Superior thermal resistance.
N-channel.
Qualified according to JEDEC1) for target.

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IPT007N06N mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IPT007N06N
Manufacturer	Infineon
File Size	639.43 KB
Description	MOSFET
Datasheet	IPT007N06N Datasheet

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Full PDF Text Transcription for IPT007N06N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPT007N06N. For precise diagrams, tables, and layout, please refer to the original PDF.

IPT007N06N MOSFET OptiMOSTMPower-Transistor,60V Features •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortarget...

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alresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 0.75 mΩ ID 486 A Qoss 227 nC QG(0V..10V) 216 nC HSOF 12345 678 Tab Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT007N06N Package PG-HSOF-8 Marking 007N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2019-07-22 OptiMOSTMPower-Transistor,60V IPT007N06N TableofContents Description . .