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IRF6898MTRPbF - Power MOSFET

This page provides the datasheet information for the IRF6898MTRPbF, a member of the IRF6898MPbF Power MOSFET family.

Description

The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

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Datasheet Details

Part number IRF6898MTRPbF
Manufacturer Infineon
File Size 502.48 KB
Description Power MOSFET
Datasheet download datasheet IRF6898MTRPbF Datasheet
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IRF6898MPbF IRF6898MTRPbF HEXFET® Power MOSFET plus Schottky Diode RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible  25V min ±16V max 0.8m@ 10V 1.2m@ 4.5V Low Package Inductance Optimized for High Frequency Switching Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for CPU Core DC-DC Converters 45nC 15nC 5.5nC 75nC 48nC 1.6V Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested S Footprint compatible to DirectFET DG D S Applicable DirectFET™ Outline and Substrate Outline (see p.
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