The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
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IRF6898MPbF IRF6898MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
RoHs Compliant Containing No Lead and Bromide
Typical values (unless otherwise specified)
Integrated Monolithic Schottky Diode Low Profile (<0.7 mm)
VDSS
VGS
RDS(on)
RDS(on)
Dual Sided Cooling Compatible
25V min ±16V max 0.8m@ 10V 1.2m@ 4.5V
Low Package Inductance Optimized for High Frequency Switching
Qg tot Qgd
Qgs2
Qrr
Qoss
Vgs(th)
Ideal for CPU Core DC-DC Converters
45nC 15nC 5.5nC 75nC 48nC
1.6V
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
100% Rg tested
S
Footprint compatible to DirectFET
DG
D
S
Applicable DirectFET™ Outline and Substrate Outline (see p.
IRF6898MPbF Datasheet
