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IRF6898M Datasheet Power MOSFET

Manufacturer: Infineon

Overview: IRF6898MPbF IRF6898MTRPbF HEXFET® Power MOSFET plus Schottky Diode RoHs pliant Containing No Lead and Bromide  Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling patible  25V min ±16V max 0.8m@ 10V 1.2m@ 4.5V Low Package Inductance Optimized for High Frequency Switching Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for CPU Core DC-DC Converters 45nC 15nC 5.5nC 75nC 48nC 1.6V Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses patible with existing Surface Mount Techniques  100% Rg tested S Footprint patible to DirectFET DG D S Applicable DirectFET™ Outline and Substrate Outline (see p.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The IRF6898MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET™ package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.

Application note AN-1035 is followed regarding the manufacturing methods and processes.

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