Datasheet4U Logo Datasheet4U.com

IRF6898MTRPbF Datasheet Power MOSFET

Manufacturer: Infineon

Overview: IRF6898MPbF IRF6898MTRPbF HEXFET® Power MOSFET plus Schottky Diode RoHs pliant Containing No Lead and Bromide  Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling patible  25V min ±16V max 0.8m@ 10V 1.2m@ 4.5V Low Package Inductance Optimized for High Frequency Switching Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for CPU Core DC-DC Converters 45nC 15nC 5.5nC 75nC 48nC 1.6V Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses patible with existing Surface Mount Techniques  100% Rg tested S Footprint patible to DirectFET DG D S Applicable DirectFET™ Outline and Substrate Outline (see p.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The IRF6898MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET™ package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.

Application note AN-1035 is followed regarding the manufacturing methods and processes.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
International Rectifier Logo IRF6898MTRPBF Power MOSFET International Rectifier
International Rectifier Logo IRF6898MPBF Power MOSFET International Rectifier

More Datasheets from Infineon

Part Number Description
IRF6898M Power MOSFET
IRF6898MPbF Power MOSFET
IRF6894MPbF Power MOSFET
IRF6894MTRPbF Power MOSFET
IRF60B217 IR MOSFET
IRF60R217 IR MOSFET
IRF6218SPbF Power MOSFET
IRF6644PbF IR MOSFET
IRF6648PbF Power MOSFET
IRF6648TRPbF Power MOSFET

IRF6898MTRPbF Distributor