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PTFA071701F Datasheet

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA071701F datasheet preview

Datasheet Details

Part number PTFA071701F
Datasheet PTFA071701F PTFA071701E Datasheet (PDF)
File Size 278.36 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701F page 2 PTFA071701F page 3

PTFA071701F Overview

The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band.

PTFA071701F Key Features

  • 20 60 55
  • Drain Efficiency (%)
  • Average output power = 35 W
  • Linear Gain = 18 dB
  • Efficiency = 34%
  • Adjacent channel power = -50 dBc Typical CW performance, 770 MHz, 30 V
  • Output power at P-1dB = 165 W
  • Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • See Infineon distributor for future availability
  • 0.07 2.48
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More Datasheets from Infineon

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Part Number Description
PTFA071701E Thermally-Enhanced High Power RF LDMOS FETs
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PTFA070601F Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501E Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E Thermally-Enhanced High Power RF LDMOS FETs

PTFA071701F Distributor

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