PTFA071701F Datasheet | Infineon

Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E- Package H-36248-2 PTFA071701F- Package H-37248-2 Two-tone Drive-up VDD = 30 V, IDQ = 900 m A, ƒ = 765 MHz, tone spacing = 1 MHz -20 60 55 Features - - - Drain Efficiency (%) Thermally-enhanced packages, Pb-free and Ro HS-pliant Broadband internal matching Typical CDMA2000 performance at 770 MHz, 30 V - Average output power = 35 W - Linear Gain = 18 d B - Efficiency = 34% - Adjacent channel power = - 50 d Bc Typical CW performance, 770 MHz, 30 V - Output power at P- 1d B = 165 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 170 W (CW) output power Intermodulation Distortion (d Bc) -25 -30 -35 -40 -45 -50 -55 -60 -65 44 46 48 50 52 54 IM3 IM5 Efficiency 50 45 40 35 30 25 - - - - IM7 20 15 Output Power, PEP (d Bm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test- verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.0 A, POUT = 40 W average, ƒ1 = 760, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 d B at 0.01% CCDF Characteristic Gain Drain Efficiency Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated Symbol Gps Min - - - Typ 18.5 32 - 36 Max - -...