Datasheet4U Logo Datasheet4U.com

PTFA092211EL Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960.

General Description

The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA092211EL Package H-33288-2 PTFA092211FL Package H-34288-2 Two-carrier WCDMA Performance VDD = 30 V, IDQ = 1.50 A, ƒ = 940 MHz, 3GPP WCDMA signal, PAR = 6.5 dB, 5 MHz carrier spacing 40 35 -20 -25

Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion =.
  • 37 dBc Typical CW performance, 940 MHz, 30 V - Output power at P.
  • 1dB = 250 W - Gain = 17.0 dB - Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output p.

More Datasheets from Infineon

Part Number Description
PTFA092211FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092213EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs

PTFA092211EL Distributor