PTFA212001E Datasheet | Infineon

Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212001E Package H-36260-2 PTFA212001F Package H-37260-2 PTFA212001E PTFA212001F IM3 (d Bc), ACPR (d Bc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 m A, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 d B, 10 MHz carrier spacing -23 30 -28 Efficiency -33 20 -38 IM3 -43 15 10 -48 ACPR 5 -53 34 36 38 40 42 44 46 Average Output Power (d Bm) 0 48 Features - Thermally-enhanced packages, Pb-free and Ro HS pliant - Broadband internal matching - Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 50 W - Linear Gain = 15.8 d B - Efficiency = 28% - Intermodulation distortion = - 35.5 d Bc - Adjacent channel power = - 40 d Bc - Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 d B - Average output power = 70 W - Linear Gain = 15.5 d B - Efficiency = 34% - Adjacent channel power = - 37 d Bc - Typical CW performance, 2170 MHz, 30 V - Output power at P- 1d B = 220 W - Efficiency = 54% - Integrated ESD protection: Human Body Model, Class 2...