PTFA212002E - Thermally-Enhanced High Power RF LDMOS FET

Infineon

PTFA212002E Datasheet Preview — Preview of PTFA212002E PDF

Datasheet Details

Part number	PTFA212002E
Manufacturer	Infineon ↗
File Size	217.26 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA212002E-Infineon.pdf

PTFA212002E Product details

Description

The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. carrier WCDMA Drive up VDD = 28 V, IDQ = 1600 mA, f1 = 2140 MHz, f2 =

Features

ons are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www. infineon. com/rfpower Preliminary Data Sheet 9 of 10 Rev. 02.

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Published: Feb 21, 2016 |