PTFA212002E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 * 2170 MHz .
The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET.

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Datasheet Specifications

Part number: PTFA212002E
Manufacturer: Infineon ↗
File Size: 217.26 KB
Datasheet: PTFA212002E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* ons are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www. infineon. com/rfpower Preliminary Data Sheet 9 of 10 Rev. 02

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PTFA212002E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA212002E-like datasheet