PTFA212002E Datasheet | Infineon

Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA212002E Package 30275 IMD (d Bc), ACPR (d Bc) Efficiency (%), Gain (d B) Two- carrier WCDMA Drive- up VDD = 28 V, IDQ = 1600 m A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 d B, 3.84 MHz BW -25 35 Drain Efficiency -30 30 -35 25 -40 Gain -45 20 15 -50 -55 37 IM3 ACPR 40 43 46 Output Power, Avg. (d Bm) 5 49 - Thermally-enhanced packaging - Broadband internal matching - Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 44 W - Gain = 15 d B - Efficiency = 27% - IM3 = - 37 d Bc - ACPR < - 40 d Bc - Typical CW performance at 2140 MHz, 28 V - Output power at P- 1d B = 220 W - Efficiency = 56% - Integrated ESD protection: Human Body Model, Class 2 (minimum) - Excellent thermal stability - Low HCI drift - Capable of handling 10:1 VSWR @ 28 V, 200 W (CW) output power RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 2 x 800 m A, POUT = 44 W average f1 = 2135 MHz, f2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 d B @ 0.01% CCDF Characteristic Symbol Min...