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PTFA212002E
Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz
Description
The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
PTFA212002E Package 30275
IMD (dBc), ACPR (dBc) Efficiency (%), Gain (dB)
Two–carrier WCDMA Drive–up
VDD = 28 V, IDQ = 1600 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW
-25 35
Drain Efficiency -30 30
-35 25
-40 Gain
-45
20 15
-50
-55 37
IM3 ACPR 40 43 46 Output Power, Avg.
PTFA212002E Datasheet
