PTFA261301E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 * 2.68 GHz .
The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications.

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Datasheet Specifications

Part number: PTFA261301E
Manufacturer: Infineon ↗
File Size: 244.71 KB
Datasheet: PTFA261301E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* Thermally-enhanced, Pb-free packages, RoHS-compliant
* Broadband internal matching
* Typical CDMA performance at 2.68 GHz - Average output power = 26 W - Linear Gain = 13 dB - Efficiency = 24%
* Typical CW performance, 2680 MHz, 28 V - Output power at P
* 1dB

Applications

* They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz. Full gold metallization ensures excellent device lifetime and reliability. PTFA261301E Package H-30260-2 Adj. Channel Power Ratio (dBc) Drain Efficiency (%) 3-Carrier CDMA2000 Performanc

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PTFA261301E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA261301E-like datasheet