Datasheet Specifications
- Part number
- PTFA261702E
- Manufacturer
- Infineon ↗
- File Size
- 359.92 KB
- Datasheet
- PTFA261702E-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
Description
PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 * 2700 MHz .
Features
* include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Efficiency (%) EVM (dBc) WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulationPTFA261702E Distributors
📁 Related Datasheet
📌 All Tags