PTFB090901FA Datasheet | Infineon

Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (d B) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 m A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 d B, 10 MHz carrier spacing, BW = 3.84 MHz 23 60 Gain 21 50 40 20 30 19 20 Efficiency 18 10 17 b090901 gr 1 31 33 35 37 39 41 43 45 47 49 Output Power, Avg. (d Bm) Features - Input and output internal matching - Typical CW performance, 960 MHz, 28 V - Output power at P1d B = 90 W - Efficiency = 65% - Typical two-carrier WCDMA performance, 960 MHz, 28 V - Average output power = 20 W - Linear Gain = 20.8 d B - Efficiency = 35% - Intermodulation distortion = - 35 d Bc - Integrated ESD protection - Low thermal resistance - Pb-free and Ro HS-pliant - Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 650 m A, POUT = 25 W average, ƒ = 960 MHz 3GPP signal, PAR = 10 d B @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz Characteristic Symbol Min...