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PXFC212551SC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXFC212551SC is a 240-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA ƒ = 2165 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 21 20 Gain 48 40 19 32 18 Efficiency 17 24 16 16 8 15 29 pxfc212551sc_g1 0 33 37 41 45 49 53 Output P.

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Datasheet Details

Part number PXFC212551SC
Manufacturer Infineon
File Size 350.67 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFC212551SC Datasheet

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Full PDF Text Transcription for PXFC212551SC (Reference)

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PXFC212551SC Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2110 – 2170 MHz Description The PXFC212551SC is a 240-watt LDMOS FET intended for use in multi-standa...

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PXFC212551SC is a 240-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA ƒ = 2165 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.