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BSC265N10LSFG - Power-Transistor

Key Features

  • N-channel, logic level.
  • Very low gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A.
  • Ideal for high-frequency switching and synchronous rectification.
  • Low on-resistance R DS(on).
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription for BSC265N10LSFG (Reference)

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BSC265N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-...

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R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A • Ideal for high-frequency switching and synchronous rectification • Low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • 150 °C operating temperature • Halogen-free according to IEC61249-2-21 www.DataSheet4U.

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