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IDC08S120E - Schottky Diode

Overview

IDC08S120E 1200V thinQ!TM SiC Schottky Diode.

Key Features

  • Revolutionary Semiconductor Material Silicon Carbide.
  • Switching Behaviour Benchmark.
  • No Reverse Recovery / No Forward Recovery.
  • Temperature Independent Switching Behaviour www. DataSheet4U. net.
  • Qualified According to JEDEC1) Based on Target.