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Infineon Technologies Electronic Components Datasheet

IPD25CNE8NG Datasheet

Power-Transistor

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IPB26CNE8N G IPD25CNE8N G
IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO252)
ID
85 V
25 m
35 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
Package
Marking
PG-TO263-3
26CNE8N
PG-TO252-3
25CNE8N
PG-TO262-3
26CNE8N
PG-TO220-3
26CNE8N
PG-TO251-3
25CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=35 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=35 A, V DS=68 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.0
page 1
35
25
140
65
6
±20
71
-55 ... 175
55/175/56
A
mJ
kV/µs
V
W
°C
2006-02-17


Infineon Technologies Electronic Components Datasheet

IPD25CNE8NG Datasheet

Power-Transistor

No Preview Available !

IPB26CNE8N G IPD25CNE8N G
IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
R thJC
R thJA
Thermal resistance, junction -
ambient (TO252, TO251)
minimal footprint
6 cm2 cooling area4)
minimal footprint
6 cm2 cooling area4)
-
-
-
-
-
- 2.1 K/W
- 62
- 40
- 75
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=39 µA
I DSS
V DS=68 V, V GS=0 V,
T j=25 °C
V DS=68 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=35 A,
(TO252)
V GS=10 V, I D=35 A,
(TO251)
V GS=10 V, I D=35 A,
(TO263)
V GS=10 V, I D=35 A,
(TO220, TO262)
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=35 A
85
2
-
-
-
-
-
-
-
-
19
- -V
34
0.1 1 µA
10 100
1 100 nA
19 25 m
19 25
20 26
20 26
1.1 -
38 - S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 2
2006-02-17


Part Number IPD25CNE8NG
Description Power-Transistor
Maker Infineon Technologies
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