Full PDF Text Transcription for IPD25CNE8NG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IPD25CNE8NG. For precise diagrams, and layout, please refer to the original PDF.
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product ...
View more extracted text
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO252) ID 85 V 25 mΩ 35 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Package Marking PG-TO263-3 26CNE8N PG-TO252-3 25CNE8N PG-TO262-3 26CNE8N PG-TO220-3 26CNE8N PG-TO251-3 25CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions
IPD25CNE8NG Datasheet
