• Part: PTFA190451F
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 386.25 KB
Download PTFA190451F Datasheet PDF
PTFA190451F page 2
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PTFA190451F page 3
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PTFA190451F Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V
  • Average output power = 11 W
  • Linear gain = 17.5 dB
  • Efficiency = 28.0%
  • Intermodulation distortion = -39 dBc
  • Adjacent channel power = -42 dBc Typical CW performance, 1960 MHz, 28 V
  • Output power at P-1dB = 60 W
  • Efficiency = 60% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • 30 -35 -40 -45 -50 -55 30 32 34 36
  • See Infineon distributor for future availability