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Infineon Technologies Electronic Components Datasheet

PTFA190451F Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
45 W, 1930 – 1990 MHz
www.DataSheet4U.net
Description
The PTFA190451E and PTFA190451F are thermally-enhanced,
45-watt, internally matched LDMOS FETs designed for WCDMA,
TD-SCDMA and other cellular standards in the 1930 to 1990 MHz
frequency band. These devices are available in thermally-enhanced
packages with eared or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA190451E
Package H-36265-2
PTFA190451F
Package H-37265-2
PTFA190451E
PTFA190451F
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 450 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing
-25 35
Efficiency
-30 30
-35 IM3 25
-40 20
-45 15
ACPR
-50 10
-55
30
32 34 36 38 40
Average Output Power (dBm)
5
42
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1960
MHz, 28 V
- Average output power = 11 W
- Linear gain = 17.5 dB
- Efficiency = 28.0%
- Intermodulation distortion = –39 dBc
- Adjacent channel power = –42 dBc
• Typical CW performance, 1960 MHz, 28 V
- Output power at P–1dB = 60 W
- Efficiency = 60%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 11 W average
ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
Gps
16.5 17.5
Drain Efficiency
ηD
27 28
Intermodulation Distortion
IMD — –39 –37
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2009-02-20


Infineon Technologies Electronic Components Datasheet

PTFA190451F Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps — 17.5
ηD — 38
IMD — –31
Max
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 450 mA
VGS = 10 V, VDS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 45 W CW)
Ordering Information
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.0
Typ
0.91
2.5
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
V
µA
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
211
1.21
–40 to +150
0.83
Unit
V
V
°C
W
W/°C
°C
°C/W
Type and Version Package Outline Package Description
PTFA190451E V4
H-36265-2
Thermally-enhanced slotted flanges,
single-ended
PTFA190451F V4
H-37265-2
Thermally-enhanced earless flange,
single-ended
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Shipping
Tray
Tray
Marking
PTFA190451E
PTFA190451F
Rev. 03.1, 2009-02-20


Part Number PTFA190451F
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon Technologies
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PTFA190451F Datasheet PDF






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