• Part: PTFA191001E
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 267.34 KB
Download PTFA191001E Datasheet PDF
Infineon
PTFA191001E
PTFA191001E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. PTFA191001E Package H-36248-2 PTFA191001F Package H-37248-2 Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 900 m A, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 d B, 10 MHz carrier spacing -23 35 Features - - - Drain Efficiency (%) Thermally-enhanced packages, Pb-free and Ro HS-pliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 d B - Efficiency = 27.5% - Intermodulation distortion = - 37 d Bc - Adjacent channel power = - 41.0 d Bc Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion = - 35 d Bc @ 1.2288 - Adjacent channel power = - 51 d Bm Typical CW performance, 1960 MHz, 30 V - Output power at P- 1d B = 130 W - Efficiency = 56% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 100 W (CW) output power Efficiency IM3 (d Bc), ACPR (d Bc) -28 -33 30 25 IM3 -38 -43 -48 20 15 10 - ACPR -53 34 36 38 40 42 44 46 5 Average Output Power (d Bm) - - - - All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device- observe handling precautions! Data Sheet 1 of 11 - See Infineon distributor for future availability. Rev. 04, 2007-10-31 PTFA191001E PTFA191001F Confidential, Limited Internal Distribution RF Characteristics...