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PTFA191001E

Manufacturer: Infineon

PTFA191001E datasheet by Infineon.

PTFA191001E datasheet preview

PTFA191001E Datasheet Details

Part number PTFA191001E
Datasheet PTFA191001E_InfineonTechnologies.pdf
File Size 267.34 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA191001E page 2 PTFA191001E page 3

PTFA191001E Overview

The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available.

PTFA191001E Key Features

  • Average output power = 25 W
  • Linear Gain = 17.0 dB
  • Efficiency = 27.5%
  • Intermodulation distortion = -37 dBc
  • Adjacent channel power = -41.0 dBc Typical two-carrier IS-95 performance at 1930 MHz, 30 V
  • Average output power = 25 W
  • Efficiency = 28%
  • Intermodulation distortion = -35 dBc @ 1.2288
  • Adjacent channel power = -51 dBm Typical CW performance, 1960 MHz, 30 V
  • Output power at P-1dB = 130 W
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