PTFA191001F
PTFA191001F is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
- Part of the PTFA191001E comparator family.
- Part of the PTFA191001E comparator family.
Description
The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. PTFA191001E Package H-36248-2
PTFA191001F Package H-37248-2
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 900 m A, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 d B, 10 MHz carrier spacing
-23 35
Features
- -
- Drain Efficiency (%)
Thermally-enhanced packages, Pb-free and Ro HS-pliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V
- Average output power = 25 W
- Linear Gain = 17.0 d B
- Efficiency = 27.5%
- Intermodulation distortion =
- 37 d Bc
- Adjacent channel power =
- 41.0 d Bc Typical two-carrier IS-95 performance at 1930 MHz, 30 V
- Average output power = 25 W
- Efficiency = 28%
- Intermodulation distortion =
- 35 d Bc @ 1.2288
- Adjacent channel power =
- 51 d Bm Typical CW performance, 1960 MHz, 30 V
- Output power at P- 1d B = 130 W
- Efficiency = 56% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 100 W (CW) output power
Efficiency IM3 (d Bc), ACPR (d Bc)
-28 -33 30 25
IM3
-38 -43 -48 20 15 10
- ACPR
-53 34 36 38 40 42 44 46 5
Average Output Power (d Bm)
- -
- -
All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device- observe handling precautions! Data Sheet 1 of 11
- See Infineon distributor for future availability.
Rev. 04, 2007-10-31
PTFA191001E PTFA191001F
Confidential, Limited Internal Distribution
RF Characteristics...