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PTFA191001F Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz ..

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications.

They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Key Features

  • Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion =.
  • 37 dBc - Adjacent channel power =.
  • 41.0 dBc Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion =.

More Datasheets from Infineon

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PTFA191001E Thermally-Enhanced High Power RF LDMOS FET
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PTFA192001E Thermally-Enhanced High Power RF LDMOS FET
PTFA192001F Thermally-Enhanced High Power RF LDMOS FET
PTFA192401E Thermally-Enhanced High Power RF LDMOS FET
PTFA192401F Thermally-Enhanced High Power RF LDMOS FET
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PTFA180701E Thermally-Enhanced High Power RF LDMOS FET

PTFA191001F Distributor