Datasheet Details
| Part number | PTFA191001E |
|---|---|
| Manufacturer | Infineon |
| File Size | 267.34 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTFA191001E Datasheet
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General Description
The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications.
They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.
Key Features
- Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion =.
- 37 dBc - Adjacent channel power =.
- 41.0 dBc Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion =.