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PTFA191001E - Thermally-Enhanced High Power RF LDMOS FET

PTFA191001E Product details

Description

The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched.

Features

  • Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion =.
  • 37 dBc - Adjacent channel power =.
  • 41.0 dBc Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion =.

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Thermally-Enhanced High Power LDMOS FET Infineon Technologies
Infineon Technologies PTFA191001E-like datasheet

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