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Infineon Technologies Electronic Components Datasheet

PTFA191001F Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1930 – 1990 MHz
www.DataSheet4U.net
Description
The PTFA191001E and PTFA191001F are thermally-enhanced,
100-watt, internally-matched LDMOS FETs intended for WCDMA,
IS-95 and CDMA2000 applications. They are characterized for single-
and two-carrier WCDMA operation from 1930 to 1990 MHz.
Thermally-enhanced packaging provides the coolest operation
available.
PTFA191001E
Package H-36248-2
PTFA191001F
Package H-37248-2
PTFA191001E
PTFA191001F
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 900 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-23 35
Efficiency
-28 30
-33
IM3
-38
25
20
-43 15
-48
-53
34
ACPR
36 38 40 42 44
Average Output Power (dBm)
10
5
46
Features
Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1960
MHz, 30 V
- Average output power = 25 W
- Linear Gain = 17.0 dB
- Efficiency = 27.5%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –41.0 dBc
• Typical two-carrier IS-95 performance at 1930
MHz, 30 V
- Average output power = 25 W
- Efficiency = 28%
- Intermodulation distortion = –35 dBc @ 1.2288
- Adjacent channel power = –51 dBm
• Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 130 W
- Efficiency = 56%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
100 W (CW) output power
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2007-10-31


Infineon Technologies Electronic Components Datasheet

PTFA191001F Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 900 mA, POUT = 44 dBm average
ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
Gps
16 17.0
Drain Efficiency
ηD
26 28
Intermodulation Distortion
IMD — –37 –35
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 900 mA
VGS = 10 V, VDS = 0 V
Maximum Ratings
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.0
Typ
0.08
2.5
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
V
µA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 100 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
417
2.38
–40 to +150
0.42
Unit
V
V
°C
W
W/°C
°C
°C/W
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 04, 2007-10-31


Part Number PTFA191001F
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon Technologies
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PTFA191001F Datasheet PDF






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