PTFA191001F - Thermally-Enhanced High Power RF LDMOS FET

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Infineon Technologies

Part number	PTFA191001F
Manufacturer	Infineon Technologies
File Size	267.34 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA191001F Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFA191001F, PTFA191001E. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFA191001F datasheet.

The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications.

They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.

Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion =.
37 dBc - Adjacent channel power =.
41.0 dBc Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion =.

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Published: Jul 11, 2011 |