SIGC223T120R2CS
SIGC223T120R2CS is IGBT manufactured by Infineon.
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Preliminary
IGBT Chip in NPT-technology
Features
:
- 1200V NPT technology 175µm chip
- low turn-off losses
- short tail current
- positive temperature coefficient
- easy paralleling
- integrated gate resistor
This chip is used for:
- IGBT Modules Applications:
- drives, SMPS, resonant applications
Chip Type
ICn
Die Size 14.4 x 15.5 mm2
Package sawn on foil
Ordering Code tbd
SIGC223T120R2CS 1200V 150A
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond...
