SPB80P06P Datasheet - Infineon Technologies

Power Transistor

* Product Summary

* P-Channel

* Enhancement mode

* Avalanche rated

* dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A

* 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halo

SPB80P06P

Infineon ↗ Technologies

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Power transistor.

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SPB80P06P Power Transistor Infineon Technologies

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