BFY183 transistor equivalent, hirel npn silicon rf transistor.
4
* For low noise, high-gain broadband amplifiers
at collector currents from 2 mA to 30 mA
* Hermetically sealed microwave package
* fT= 8GHz
F = 2.3 dB.
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Table 1
Product information
Type
Comment
Pin Configuration
1
2
3
4
BFY183(ES) BFY183(P)1
For flight use
C
E
B
E
Not for flight use1
1 (P) parts have the sam.
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