Datasheet Details
| Part number | ITCH20120B2E |
|---|---|
| Manufacturer | Innogration |
| File Size | 881.01 KB |
| Description | High Power RF LDMOS FET |
| Download | ITCH20120B2E Download (PDF) |
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Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH20120B2 Preliminary Datasheet V1.
Download the ITCH20120B2E datasheet PDF. This datasheet also includes the ITCH20120B2 variant, as both parts are published together in a single manufacturer document.
| Part number | ITCH20120B2E |
|---|---|
| Manufacturer | Innogration |
| File Size | 881.01 KB |
| Description | High Power RF LDMOS FET |
| Download | ITCH20120B2E Download (PDF) |
|
|
|
The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH20120B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .
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