• Part: ITCH22210B2
  • Description: High Power RF LDMOS FET
  • Manufacturer: Innogration
  • Size: 936.51 KB
Download ITCH22210B2 Datasheet PDF
ITCH22210B2 page 2
Page 2
ITCH22210B2 page 3
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ITCH22210B2 Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
  • Pb-free, RoHS-pliant
  • 10 to +10 +32
  • 65 to +150 +150 +225