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MR2002C Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

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Datasheet Details

Part number MR2002C
Manufacturer Innogration
File Size 280.57 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MR2002C Datasheet

General Description

The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.

It can be used MR2002C in Class AB/B and Class C for all typical modulation formats.

It can also operate at lower voltage down to 12V with decreased power capability.

Overview

MR2002C LDMOS TRANSISTOR Document Number: MR2002C Preliminary Datasheet V1.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable.

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