MR2003C - High Power RF LDMOS FET

Innogration

The MR2003C by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

📥 Download Datasheet

MR2003C High Power RF LDMOS FET by Innogration - Datasheet Preview — Official preview page of the **MR2003C** High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number	MR2003C
Manufacturer	Innogration
File Size	280.48 KB
Description	High Power RF LDMOS FET
Datasheet	MR2003C-Innogration.pdf
Additional preview pages of the MR2003C datasheet.

MR2003C Product details

Description

The MR2003C is a 30-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 200 mA, CW.Frequency Gp (dB) P-1dB (W) 1000 MHz 22 30 D@P-1 (%) 65 Notice: It is recomme

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Suitable Applicatio.

📁 MR2003C Similar Datasheet

MR2000 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2001 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2002 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2004 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2006 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2008 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2010 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR20H40 - 4Mb SPI Interface MRAM (Everspin)

Other Datasheets by Innogration

MR2002C - High Power RF LDMOS FET
MR2006C - High Power RF LDMOS FET

Published: Aug 5, 2018 |