VTSV02175 Datasheet RF Power N-channel MOSFET

Manufacturer: Innogration

VTSV02175 rf power n-channel mosfet by Innogration - Datasheet Preview

Datasheet Details

Part number	VTSV02175
Manufacturer	Innogration
File Size	872.92 KB
Description	RF Power N-channel MOSFET
Download	VTSV02175 Download (PDF)

General Description

The VTSV02175 is a 175-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 200 MHz.

 Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 250 mA, CW.

Frequency Gp (dB) POUT (W) D (%) 175 MHz 15.5 190 63 Document Number: VTSV02175 Product Datasheet V1.2 VTSV02175

Overview

Innogration (Suzhou) Co., Ltd.

175W, 50V RF Power N-channel MOSFETs.

Key Features

Gold metallization.
Common source configuration.
Excellent thermal stability, low HCI drift.
Low RDS(on).
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol V(BR)DSS VDGR VGS ID PDISS Tstg TC TJ Drain Gate 13 Source 24 Figure 1. Pin Connection Value 130 130 -40 to +40.

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