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IS41LV16400 Datasheet 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Manufacturer: ISSI (now Infineon)

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General Description

The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

Overview

IS41LV16400 4M x 16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE.

Key Features

  • Extended Data-Out (EDO) Page Mode access cycle.
  • TTL compatible inputs and outputs; tristate I/O.
  • Refresh Interval: 4,096 cycles / 64 ms.
  • Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • Low Standby power dissipation:.
  • 1.8mW(max) CMOS Input Level.
  • Single power supply: 3.3V ± 10%.
  • Byte Write and Byte Read operation via two CAS.
  • Extended Temperature Range -30oC to 85oC.
  • Industrail Temperature Ra.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16105 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16105B 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16256A 256K x 16 (4-MBIT) DYNAMIC RAM
IS41LV16256B 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16257A 256K x 16 (4-MBIT) DYNAMIC RAM
IS41LV16257B 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE