IS41LV85120A, IS41C85120A Datasheet - Integrated Silicon Solution

IS41LV85120A 512K x 8 (4-MBIT) DYNAMIC RAM

The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word. The Byte Write.

IS41LV85120A Features

* TTL compatible inputs and outputs

* Refresh Interval: 1024 cycles/16 ms

* Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden

* JEDEC standard pinout

* Single power supply 5V ± 10% (IS41C85120A) 3.3V ± 10% (IS41LV85120A)

* Lead-free available

IS41C85120A_IntegratedSiliconSolution.pdf

IS41LV85120A Datasheet Preview — This datasheet PDF includes multiple part numbers: IS41LV85120A, IS41C85120A. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IS41LV85120A, IS41C85120A

Manufacturer:

Integrated Silicon Solution

File Size:

160.77 KB

Description:

512k x 8 (4-mbit) dynamic ram.

Note:

This datasheet PDF includes multiple part numbers: IS41LV85120A, IS41C85120A.
Please refer to the document for exact specifications by model.

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IS41LV85120A IS41C85120A 512K 4-MBIT DYNAMIC RAM Integrated Silicon Solution

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