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IS66WV51216DALL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Description

words by 16 bits.

Features

  • High-speed access time:.
  • 70ns (IS66WV51216DALL, IS66/67WV51216DBLL).
  • 55ns (IS66/67WV51216DBLL).
  • CMOS low power operation.
  • Single power supply.
  • Vdd = 1.7V-1.95V (IS66WV51216 ALL).
  • Vdd = 2.5V-3.6V (IS66/67WV51216 BLL).
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Lead-free available.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WV51216DBLL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS61C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C256 32K x 8 Low Voltage CMOS STATIC RAM
IS61C25616 256K x 8 High Speed CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JULY 2011 FEATURES • High-speed access time: – 70ns (IS66WV51216DALL, IS66/67WV51216DBLL) – 55ns (IS66/67WV51216DBLL) • CMOS low power operation • Single power supply – Vdd = 1.7V-1.95V (IS66WV51216 ALL) – Vdd = 2.5V-3.6V (IS66/67WV51216 BLL) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS66WV51216DALL and IS66/67WV51216DBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.
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