IS66WV51216DBLL ram equivalent, 8mb low voltage ultra low power pseudo cmos static ram.
* High-speed access time:
– 70ns (IS66WV51216DALL, IS66/67WV51216DBLL)
– 55ns (IS66/67WV51216DBLL)
* CMOS low power operation
.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS66WV51216DALL and IS66/67WV51216DBLL
are high-speed, 8M bit static RAMs organized as 512K
words by 16 bits. It is fabricated using ISSI's high-
performance CMOS technology.This highly reliable process coupled with innovative circuit desig.
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