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InterFET

J110 Datasheet Preview

J110 Datasheet

N-Channel JFET

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J110-A
J110, J110A N-Channel JFET
Features
InterFET N0450S Geometry
Low Noise: 1 nV/√Hz Typical
High Gain: 100mS Typical
RoHS Compliant
SMT, TH, and Bare Die Package options.
Applications
Choppers
Commutators
Analog Switches
Description
The -25V InterFET J110 and J110A JFET’s are
targeted for high gain low noise switching,
commutator, and chopper applications.
Source 1
Drain 2
SOT23 Top View
3 Gate
Gate 3
Drain 2
Source 1
TO-92 Bottom View
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
J110 Min
J110A Min
Unit
-25
-25
V
10
10
mA
-0.5
-0.5
V
Ordering Information Custom Part and Binning Options Available
Part Number
Description
J110; J110A
Through-Hole
SMPJ110; SMPJ110A
Surface Mount
7“ Tape and Reel: Max 3,000 Pieces
SMPJ110TR; SMPJ110ATR 13” Tape and Reel: Max 9,000 Pieces
J110COT; J110ACOT
Chip Orientated Tray (COT Waffle Pack)
J110CFT; J110ACFT
Chip Face-up Tray (CFT Waffle Pack)
Case
TO-92
SOT23
SOT23
COT
CFT
Packaging
Bulk
Bulk
Minimum 1,000 Pieces
Tape and Reel
400/Waffle Pack
400/Waffle Pack
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and
extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and
security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35073.R00




InterFET

J110 Datasheet Preview

J110 Datasheet

N-Channel JFET

No Preview Available !

InterFET
Product
Folder
Technical
Support
Electrical Characteristics
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters
VRGS Reverse Gate Source and Gate Drain Voltage
IFG Continuous Forward Gate Current
PD Continuous Device Power Dissipation
P Power Derating
TJ Operating Junction Temperature
TSTG Storage Temperature
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
V(BR)GSS
IGSS
VGS(OFF)
IDSS
ID
Parameters
Gate to Source
Breakdown Voltage
Gate to Source
Reverse Current
Gate to Source
Cutoff Voltage
Drain to Source
Saturation Current
Drain Cutoff Current
Conditions
VDS = 0V, IG = -1μA
VGS = -15V, VDS = 0V
VDS = 5V, ID = 1μA
VGS = 0V, VDS = 15V
(Pulsed)
VDS = 5V, VGS = -10V
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
RDS(ON)
Cgd
Cgs
Cgd + Cgs
td(ON)
Parameters
Drain to Source
ON Resistance
Drain Gate
Capacitance
Input Capacitance
Drain + Source Gate
Capacitance
Turn ON Delay Time
tr
Rise Time
td(OFF)
Turn OFF Delay Time
tf
Fall Time
Conditions
VDS <= 0.1V, VGS = 0V, f = 1kHz
VDS = 0V, VGS = -10V, f = 1MHz
VDS = 0V, VGS = -10V, f = 1MHz
VDS = VGS = 0V, f = 1MHz
VDD = 1.5V, VGS(OFF) = -5V,
RL = 150 Ω
Order
Now
J110-A
Value
-25
50
360
3.27
-55 to 125
-65 to 200
Unit
V
mA
mW
mW/°C
°C
°C
J110
J110A
Min Max Min Max Unit
-25
-25
V
-3
-3
nA
-0.5
-4
-0.5
-4
V
10
10
mA
3
3
nA
J110
J110A
Min Max Min Max Unit
18
25
Ω
15
15
pF
15
15
pF
85
85
pF
4 (typ)
4 (typ)
ns
1 (typ)
1 (typ)
ns
6 (typ)
6 (typ)
ns
30 (typ)
30 (typ)
ns
J110-A
Document Number: IF35073.R00
2 of 4
www.InterFET.com
InterFET Corporation
June, 2019


Part Number J110
Description N-Channel JFET
Maker InterFET
Total Page 3 Pages
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