N0072S - Process Geometry

Description

The InterFET N0072S Geometry is ideal for low noise audio and matched pair applications.

Features

Low Noise: 2.0 nV/√Hz Typical.
Typical Input Capacitance: 6.5pF.
Typical Breakdown Voltage: -45V.
Small Die: 467um X 467um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

InterFET

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Datasheet Details

Part number	N0072S
Manufacturer	InterFET
File Size	355.62 KB
Description	Process Geometry
Datasheet	N0072S Datasheet

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Full PDF Text Transcription

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InterFET Product Folder Technical Support Order Now N0072S N0072S Process Geometry Features • Low Noise: 2.0 nV/√Hz Typical • Typical Input Capacitance: 6.5pF • Typical Breakdown Voltage: -45V • Small Die: 467um X 467um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Low Noise Amplifier • Audio Amplifiers • Matched Pair Applications • Custom Part Options Description The InterFET N0072S Geometry is ideal for low noise audio and matched pair applications. Similar features to the N0072L Geometry with higher breakdown voltage.

Published: Jun 13, 2020 |