N0072S - Process Geometry

InterFET

General Description

The InterFET N0072S Geometry is ideal for low noise audio and matched pair applications.

Key Features

Low Noise: 2.0 nV/√Hz Typical.
Typical Input Capacitance: 6.5pF.
Typical Breakdown Voltage: -45V.
Small Die: 467um X 467um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

📥 Download Datasheet

N0072S process geometry by InterFET - Datasheet Preview

Datasheet Details

Part number	N0072S
Manufacturer	InterFET
File Size	355.62 KB
Description	Process Geometry
Datasheet	N0072S Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by InterFET

Part Number	Description
N0072L	Process Geometry
N0001H	Process Geometry
N0014EU	Process Geometry
N0014L	Process Geometry
N0016H	Process Geometry

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

InterFET Product Folder Technical Support Order Now N0072S N0072S Process Geometry Features • Low Noise: 2.0 nV/√Hz Typical • Typical Input Capacitance: 6.5pF • Typical Breakdown Voltage: -45V • Small Die: 467um X 467um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Low Noise Amplifier • Audio Amplifiers • Matched Pair Applications • Custom Part Options Description The InterFET N0072S Geometry is ideal for low noise audio and matched pair applications. Similar features to the N0072L Geometry with higher breakdown voltage.