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International Rectifier Electronic Components Datasheet

G4PC50U Datasheet

IRG4PC50U

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PD 91470F
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50U
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
55
27
220
220
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Typ.
----
0.24
----
6 (0.21)
Max.
0.64
----
40
----
Units
°C/W
g (oz)
1
12/30/00


International Rectifier Electronic Components Datasheet

G4PC50U Datasheet

IRG4PC50U

No Preview Available !

IRG4PC50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ----
----
VCE(ON)
Collector-to-Emitter Saturation Voltage
----
----
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
3.0
----
16
----
----
----
IGES Gate-to-Emitter Leakage Current
----
---- ---- V VGE = 0V, IC = 250µA
---- ---- V VGE = 0V, IC = 1.0A
0.60 ---- V/°C VGE = 0V, IC = 1.0mA
1.65 2.0
IC = 27A
VGE = 15V
2.0 ----
1.6 ----
V
IC = 55A
See Fig.2, 5
IC = 27A , TJ = 150°C
---- 6.0
VCE = VGE, IC = 250µA
-13 ---- mV/°C VCE = VGE, IC = 250µA
24 ---- S VCE 15V, IC = 27A
---- 250 µ A VGE = 0V, VCE = 600V
---- 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
---- 5000
VGE = 0V, VCE = 600V, TJ = 150°C
---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
---- 180 270
IC = 27A
---- 25 38
---- 61 90
nC VCC = 400V
VGE = 15V
See Fig. 8
---- 32 ----
---- 20 ---- ns TJ = 25°C
---- 170 260
IC = 27A, VCC = 480V
---- 88 130
VGE = 15V, RG = 5.0
---- 0.12 ----
Energy losses include "tail"
---- 0.54 ---- mJ See Fig. 10, 11, 13, 14
---- 0.66 0.9
---- 31 ----
TJ = 150°C,
---- 23 ---- ns IC = 27A, VCC = 480V
---- 230 ----
VGE = 15V, RG = 5.0
---- 120 ----
Energy losses include "tail"
---- 1.6 ---- mJ See Fig. 13, 14
---- 13 ---- nH Measured 5mm from package
---- 4000 ----
VGE = 0V
---- 250 ----
---- 52 ----
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com


Part Number G4PC50U
Description IRG4PC50U
Maker International Rectifier
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G4PC50U Datasheet PDF






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