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International Rectifier Electronic Components Datasheet

G4PH50UD Datasheet

IRG4PH50UD

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PD 91573A
IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
www.DataSheet4U.com >200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.78V
@VGE = 15V, IC = 24A
bridge configurations
• Industry standard TO-247AC package
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
1200
45
24
180
180
16
180
± 20
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.64
0.83
–––
40
–––
Units
°C/W
g (oz)
1
7/7/2000


International Rectifier Electronic Components Datasheet

G4PH50UD Datasheet

IRG4PH50UD

No Preview Available !

IRG4PH50UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
www.DataSheet4U.com
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS 1200 — — V
Temperature Coeff. of Breakdown Voltage 1.20 V/°C
Collector-to-Emitter Saturation Voltage 2.56 3.5
2.78 3.7
3.20 V
2.54
Gate Threshold Voltage
3.0 6.0
Temperature Coeff. of Threshold Voltage -13 mV/°C
Forward Transconductance T
23 35 S
Zero Gate Voltage Collector Current
— — 250 µA
— — 6500
Diode Forward Voltage Drop
2.5 3.5 V
2.1 3.0
Gate-to-Emitter Leakage Current
— — ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 20A
VGE = 15V
IC = 24A
IC = 45A
See Fig. 2, 5
IC = 24A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 24A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 16A
See Fig. 13
IC = 16A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
160 250
IC = 24A
27 40 nC VCC = 400V
See Fig. 8
53 80
VGE = 15V
47
TJ = 25°C
24 ns IC = 24A, VCC = 800V
110 170
VGE = 15V, RG = 5.0
180 260
Energy losses include "tail" and
2.10
diode reverse recovery.
1.50 mJ See Fig. 9, 10, 18
3.60 4.6
46
27
240
330
TJ = 150°C, See Fig. 11, 18
ns IC = 24A, VCC = 800V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
6.38 mJ diode reverse recovery.
13 nH Measured 5mm from package
3600
160
31
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
90 135 ns TJ = 25°C See Fig.
164 245
TJ = 125°C 14
IF = 16A
5.8 10 A TJ = 25°C See Fig.
8.3 15
TJ = 125°C 15
VR = 200V
260 675 nC TJ = 25°C See Fig.
680 1838
TJ = 125°C
16 di/dt = 200A/µs
120 A/µs TJ = 25°C See Fig.
76
TJ = 125°C 17
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Part Number G4PH50UD
Description IRG4PH50UD
Maker International Rectifier
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