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International Rectifier Electronic Components Datasheet

IRF1324LPBF Datasheet

Power MOSFET

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Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97353A
IRF1324SPbF
IRF1324LPbF
HEXFET® Power MOSFET
D VDSS
24V
RDS(on) typ.
1.3m
max.
ID (Silicon Limited)
1.65m
c340A
S ID (Package Limited) 195A
GDS
D2Pak
IRF1324SPbF
GDS
TO-262
IRF1324LPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
kJunction-to-Case
jkJunction-to-Ambient (PCB Mounted, steady-state)
www.irf.com
D
Drain
S
Source
Max.
340
240
195
1420
300
2.0
± 20
0.46
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
°C
270
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.50
40
mJ
A
mJ
Units
°C/W
1
09/24/09
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRF1324LPBF Datasheet

Power MOSFET

No Preview Available !

IRF1324S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
24 ––– ––– V VGS = 0V, ID = 250µA
d––– 22 ––– mV/°C Reference to 25°C, ID = 5.0mA
g––– 1.3 1.65 mVGS = 10V, ID = 195A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 250
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
RG Internal Gate Resistance
––– 2.3 –––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
180 ––– ––– S VDS = 10V, ID = 195A
Qg
Qgs
Qgd
Qsync
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
––– 160 240
––– 84 –––
––– 49 –––
––– 76 –––
––– 17 –––
––– 190 –––
nC ID = 195A
gVDS = 12V
VGS = 10V
ID = 195A, VDS =0V, VGS = 10V
ns VDD = 16V
ID = 195A
td(off)
tf
Ciss
Coss
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
––– 83 –––
––– 120 –––
––– 7590 –––
––– 3440 –––
gRG = 2.7
VGS = 10V
pF VGS = 0V
VDS = 24V
Crss Reverse Transfer Capacitance
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
Coss eff. (TR) Effective Output Capacitance (Time Related) –––
Diode Characteristics
1960
4700
4490
–––
–––
–––
ƒ = 1.0 MHz, See Fig. 5
iVGS = 0V, VDS = 0V to 19V , See Fig. 11
hVGS = 0V, VDS = 0V to 19V
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
™––– ––– 350 A MOSFET symbol
showing the
D
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
––– ––– 1420 A integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 195A, VGS = 0V
––– 46 ––– ns TJ = 25°C
VR = 20V,
S
Qrr Reverse Recovery Charge
––– 71 –––
––– 160 –––
TJ = 125°C
nC TJ = 25°C
gIF = 195A
di/dt = 100A/µs
––– 430 –––
TJ = 125°C
IRRM Reverse Recovery Current
ton Forward Turn-On Time
––– 7.7 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 195A, di/dt 450A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140).
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.014mH
RG = 25, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
2 www.irf.com
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Part Number IRF1324LPBF
Description Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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