Datasheet Details
| Part number | IRF6616PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 300.85 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6616PBF Datasheet
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General Description
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile.
Key Features
- e Pulse 0 1 10 100 1000 1.00 1 0.10 VGS = 0V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 120 100 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 2.5 Fig11. Maximum Safe Operating Area 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Junction Temperature ( °C ) Fig.