IRF6616PBF Datasheet - International Rectifier

Power MOSFET

IRF6616PBF Features

* e Pulse 0 1 10 100 1000 1.00 1 0.10 VGS = 0V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 120 100 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 2.5 F

IRF6616PBF General Description

The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geo.

IRF6616PBF Datasheet (300.85 KB)

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IRF6616PBF

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International Rectifier

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300.85 KB

Description:

Power mosfet.
IRF6616PbF IRF6616TRPbF RoHS compliant containing no lead or bormide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package I.

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IRF6616PBF Power MOSFET International Rectifier

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IRF6616PBF Features

IRF6616PBF General Description

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