IRF6616TRPBF Description
The IRF6616 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low bined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when...
IRF6616TRPBF Key Features
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Ultra Low Package Inductance
- Optimized for High Frequency Switching
- Low Conduction and Switching Losses
- patible with existing Surface Mount Techniques
- Lead-Free