Description
The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile.
Features
- ig 14b. Unclamped Inductive Waveforms
+
VDD D. U. T VGS Pulse Width < 1µs Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 15a. Switching Time Test Circuit
Current Regulator Same Type as D. U. T. Fig 15b. Switching Time Waveforms
Id Vds Vgs
50KΩ 12V .2µF .3µF
D. U. T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
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Free Datasheet http://www. Datasheet4U. com
IRF661.
IRF6617TRPBF Datasheet
