IRF6631TRPBF Datasheet | International Rectifier

Description The IRF6631Pb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6631Pb F balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6631Pb F has been optimized for parameters that are critical in synchronous buck converter’s Ctrl FET sockets. Absolute Maximum Ratings V DS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM E AS IAR Parameter Max. Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g e e f Ãg h VGS, Gate-to-Source Voltage (V) 30 ±20 13 10 57 100 13 10 A m J A Typical RDS(on) (mΩ) 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 5 10 15 20 25 30 QG Total Gate Charge (n C) ID= 10A VDS= 24V VDS= 15V ID = 13A 15 10 5 T J = 25°C 0 3 4 5 6 7 8 9 10 T J = 125°C VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the Direct FET Website. - Surface mounted on 1 in. square Cu board,...